Migration was investigated by using two configurations. These were diffusion from an external source into uniformly n-doped substrates, and diffusion between the layers of n-p-n-p-n structures which had been grown via metalorganic chemical vapor deposition. Alternating layers of n-type material (0.0005mm, [Si] = 1016 to 3 x 1019/cm3) were grown by using low-pressure metalorganic chemical vapor deposition at 625C. The distributions of Si were determined by means of secondary ion mass spectrometry. No diffusion of Si across the grown dopant interface was detected. Electrochemical capacitance-voltage profiling indicated that the Si was electrically active.

Secondary Ion Mass Spectrometry and Electrical Characterization of Zn Diffusion in n-Type InP. C.Blaauw, F.R.Shepherd, D.Eger: Journal of Applied Physics, 1989, 66[2], 605-10