Metalorganic vapor-phase diffusion into epitaxial layers, using diethylzinc, was studied. The epitaxial layers were grown via low-pressure metalorganic vapor-phase epitaxy, and hole concentrations of 6 x 1018/cm3 were obtained. The diffusion depths were measured by using cleave-and-stain techniques, electrochemical profiling, resistivity measurements and secondary ion mass spectroscopy. Hall measurements were used to determine the hole concentrations. The diffusion depth could be reproducibly controlled, from 0.5 to over 2μm. The diffusion coefficients were deduced, and the effect of the dislocation density of the layers upon Zn diffusion was investigated by epitaxial growth on various substrate orientations.

MOVPE-Based Zn Diffusion into InP and InAsP/InP Heterostructures. K.Vanhollebeke, M.D'Hondt, I.Moerman, P.Van Daele, P.Demeester: Journal of Crystal Growth, 2001, 233[1-2], 132-40