Diethylzinc was used as a p-type dopant source during the chemical beam epitaxial growth of InP. Secondary ion mass spectrometry measurements indicated that very marked Zn diffusion occurred when the Zn concentration appeared to reduce the pyrolytic efficiency of trimethylindium.

Zinc-Doping of InP during Chemical Beam Epitaxy using Diethylzinc. W.T.Tsang, F.S.Choa, N.T.Ha: Journal of Electronic Materials, 1991, 20[8], 541-4