The Zn was diffused, from a dimethylzinc source, at temperatures ranging from 400 to 570C using surface concentrations ranging from 1017 to 1018/cm3. The resultant diffusion profiles were determined by using secondary ion mass spectrometry, electrolytic etching, and capacitance-voltage measurements. The results indicated that an interstitial-substitutional mechanism operated at the above concentrations.

Zn Diffusion into InP Using Dimethylzinc as a Zn Source. M.Wada, M.Seko, K.Sakakibara, Y.Sekiguchi: Japanese Journal of Applied Physics, 1989, 28[10], L1700-3