Profiles of Zn in n‐type <100> wafers after ampoule diffusion were measured using secondary ion mass spectrometry, Auger electron spectrometry, differential Hall‐effect measurements, capacitance measurements and scanning electron microscopy. The results could be explained in terms of an interstitial‐substitutional mechanism in which Zn diffused as a singly ionized interstitial and was incorporated into the In sub-lattice as an electrically active substitutional acceptor or as an electrically inactive complex. At Zn concentrations lower than the background donor concentration, the profile was cut off as interstitial diffusion broke down. The acceptor solubility increased with background donor concentration. The activation energies for diffusion and solubility were found to be 1.40 and 1.0eV, respectively.

Zinc Diffusion in n‐Type Indium Phosphide. G.J.Van Gurp, P.R.Boudewijn, M.N.C.Kempeners, D.L.A.Tjaden: Journal of Applied Physics, 1987, 61, 1846

Figure 12

Diffusivity of Zn in xInGaAs-(1-x)InP

(White: x = 0, black: x = 0.39, hatched: x = 0.63)