A PbTe source was used to grow n-type InSb by means of molecular beam epitaxy. Auger electron spectroscopic data showed that no surface segregation of Te occurred at doping levels of up to about 1019/cm3. Secondary ion mass spectrometry did not reveal the presence of Pb in the films, even at growth temperatures which were as low as 280C. This suggested that the Pb rapidly evaporated from the surface during growth. The secondary ion mass spectrometric depth profiles for Te revealed signs of solid-state diffusion at 360C; with a diffusion coefficient of about 10-13cm2/s.
Growth and Characterization of Indium Antimonide Doped with Lead Telluride. D.L.Partin, J.Heremans, C.M.Thrush: Journal of Applied Physics, 1992, 71[5], 2328-32
Table 18
Diffusivity of Cu, Ga and In at In2Se3/CuGaSe2 Interfaces
Diffusant | Temperature (C) | D (cm2/s) |
Cu | 200 | 2.5 x 10-14 |
Cu | 250 | 8.2 x 10-14 |
Ga | 200 | 1.8 x 10-14 |
Ga | 250 | 4.1 x 10-14 |
Ga | 300 | 6.6 x 10-14 |
Ga | 350 | 1.7 x 10-13 |
Ga | 400 | 3.1 x 10-13 |
In | 200 | 3.1 x 10-14 |
In | 250 | 5.2 x 10-14 |
In | 300 | 1.0 x 10-13 |
In | 350 | 2.0 x 10-13 |
In | 400 | 3.3 x 10-13 |