The migration of Ag from epitaxial layers and into (111) samples of Si, during annealing at temperatures of between 450 and 500C, was studied by means of secondary ion mass spectrometric depth profiling. It was found that the diffusivities lay between 8 x 10-16 and 1.6 x 10-15cm2/s (table 19). These values were lower than were expected on the basis of previous data.

Study of Silver Diffusion into Si(111) and SiO2 at Moderate Temperatures T.C.Nason, G.R.Yang, K.H.Park, T.M.Lu: Journal of Applied Physics, 1991, 70[3], 1392-6

Table 19

Diffusion of Ag into (111)Si