Results of As diffusion under intrinsic diffusion conditions in Si and SiGe (5, 10% Ge) alloys were presented. Epitaxial Si and compressively strained SiGe structures with buried marker layers of As were grown using molecular beam epitaxy. The concentration profiles before and after Rapid Thermal Annealing at 1000C were measured using secondary ion mass spectrometry. An enhancement of intrinsic As diffusivity in SiGe compared to Si was observed, in agreement with literature. However, for As in Si0.95Ge0.05 strain seems to compensate the effect of enhancement due to Ge chemical effect although for Si0.9Ge0.1 the chemical effect overcomes the retardation due to strain.

Arsenic Diffusion in Si and Strained SixGe1−x Alloys at 1000C. S.Uppal, J.M.Bonar, J.Zhang, A.F.W.Willoughby: Materials Science and Engineering B, 2004, 114-115, 349-51