The diffusion of B and As from polycrystalline Si into single crystal Si during rapid thermal annealing (1000 to 1150C, 20s) was investigated. Samples were characterized by means of secondary ion mass spectrometry. The volume and intergranular diffusion coefficient was deduced from the B profiles. The depth profiles were analyzed by using the Suzuoka model. It was established that the grain boundary diffusivities were 2 to 3 times higher than the volume diffusivities.

Volume and Grain Boundary Diffusivity of Boron in Polycrystalline Silicon during Rapid Thermal Annealing. A.Merabet, C.Gontrand: Materials Science and Engineering B, 2003, 102[1-3], 257-61