The co-diffusion of As and B in polycrystalline and monocrystalline bi-layers, during the formation of shallow N+ emitters, was studied. It was found that rapid thermal annealing led to the redistribution, as measured by secondary ion mass spectrometry, of As and B which were successively implanted into a 380nm low-pressure chemical vapor-deposited polycrystalline layer. Hall effect The co-diffusion of As and B in polycrystalline and monocrystalline bi-layers, during the formation of shallow N+ emitters, was studied. It was found that rapid thermal annealing led to the redistribution, as measured by secondary ion mass spectrometry, of As and B which were successively implanted into a 380nm low-pressure chemical vapor-deposited polycrystalline layer. Hall effect