The transient enhanced diffusion of BF2+ which had been implanted into crystalline and Ge-amorphized material was simulated. The effect of F upon B diffusion was considered, and a model was suggested. In order to simulate experimental B profiles, it was assumed that F formed clusters which involved interstitial B and reduced the junction depth. The experimental results indicated that the behaviour of F depended upon the amorphization energy. It was noted that, although no Ge pre-amorphization was carried out, the Si was nevertheless amorphized by F species. Implantation of BF2+ therefore created an amorphous/crystalline interface near to the surface. An improvement to published models was suggested which took account of F effects. The simulations satisfactorily reproduced experimental secondary ion mass spectrometry profiles for a wide range of experimental conditions.

Influence of Fluorine on the Simulation of the Transient Enhanced Diffusion of 15keV BF2+ Ion Implantation into Silicon. A.Dusch, J.Marcon, K.Masmoudi, K.Ketata, F.Olivié, M.Benhzora, M.Ketata: Nuclear Instruments and Methods in Physics Research B, 2002, 186[1-4], 360-5