It was noted that a significant retardation of the transient enhanced diffusion of 5keV B, implanted into Si, was achieved when it was co-implanted with 1MeV Si. Almost complete retardation was observed when this was performed using SOI substrates which isolated the layers that contained most of the point defects, due to the high-energy Si implantation, from the near-surface regions. Measurements of the defect profile arising from the Si implantation, using Rutherford back-scattering channeling analysis coupled with high-resolution secondary ion mass spectrometric analysis of the B profile, provided a detailed picture of the dopant/defect relationship. Other data, gleaned using positron annihilation spectroscopy, clarified the situation with regard to vacancy-type defects. Data arising from spreading resistance measurements revealed the activation efficiency of B under these conditions. Other high-energy implants were tested, and various SOI materials were used to investigate the role played by the depth of the barrier layer in retarding transient enhanced diffusion.

Retarding Transient Enhanced Diffusion of Boron in Silicon with High-Energy Silicon Co-Implants. A.Nejim, B.J.Sealy: Semiconductor Science and Technology, 2003, 18[9], 839-44