It was demonstrated that substitutional B could migrate, even at room temperature and below, when stimulated by a high interstitial flux. When mobile B formed it migrated for long distances, with a diffusivity greater than 5 x 10-13cm2/s, until it assumed an immobile configuration with a migration length that was independent of temperature. This occurred during secondary ion mass spectrometric analyses of B profiles; thus altering the profile during the analysis.

Room Temperature Migration of Boron in Crystalline Silicon. E.Napolitani, D.De Salvador, R.Storti, A.Carnera, S.Mirabella, F.Priolo: Physical Review Letters, 2004, 93[5], 055901