A suggestion was made to characterize B transient enhanced diffusion for processes currently used for P+/N ultra-shallow junction fabrication. In experiments, B anomalous diffusion, due to B buried marker-layers obtained by epitaxial growth, was characterized. Here, B+ and BF2+ ultra-low energy implantation and plasma doping, using BF3 as the precursor gas, were carried out in order to compare the 2 techniques used for advanced ultra-shallow junction fabrication. The B-diffusion behavior was analyzed, via secondary ion mass spectrometry, during annealing (700C, 300s or 0.25h). The results revealed some physical insights which explained the technological benefits arising from the plasma-doping technique, as compared with standard ion implantation.

Investigation of Boron Transient Enhanced Diffusion Induced by the Advanced P+/N Ultra-Shallow Junction Fabrication Processes. F.Lallement, D.Lenoble: Nuclear Instruments and Methods in Physics Research B, 2005, 237[1-2], 113-20