A study was made of the effect of millisecond laser annealing upon boron -and germanium- co-implanted polysilicon films. A sensitive boron diffusion was observed during the laser annealing step; with or without an initial spike annealing step. The activation energy for boron diffusivity, deduced from SIMS profiles in the laser only sequence, was 4.05eV. It was shown that either a high temperature laser annealing sequence, or spike annealing followed by a laser annealing sequence, could produce the same activation levels.

Dopant Diffusion and Activation Induced by Sub-Melt Laser Anneal within the Co-Implanted p+ Polycrystalline Silicon Gate used in CMOS Technologies. A.Colin, P.Morin, R.Beneyton, L.Pinzelli, D.Mathiot, E.Fogarassy: Thin Solid Films, 2010, 518[9], 2390-3