The efficiency of a cavity band in reducing B transient enhanced diffusion was checked in silicon interstitial supersaturation conditions, obtained by high dose Si implantation. He was implanted either at 10keV or at 50keV to a fluence of 5 x 1016/cm2. Conventional techniques to introduce and activate the B (conventional ion implantation and rapid thermal annealing) were applied in order to have a better control of the technological process to focus on the benefit of the cavity layer. The samples were characterized by cross-sectional transmission electron microscopy, secondary ion mass spectroscopy and Hall Effect. The latter showed that good activation of the B was achieved only after 1000C rapid thermal annealing, though a 900C rapid thermal annealing was sufficient for implantation-damage recovery, as it was confirmed by cross-sectional transmission electron microscopy observations. Boron secondary ion mass spectroscopy profiles showed that the band of cavities played  its best effect in reducing B transient enhanced diffusion when it was located near to the surface.

Defect Engineering via Ion Implantation to Control B Diffusion in Si. M.Canino, G.Regula, M.Xu, E.Ntzoenzok, B.Pichaud: Materials Science and Engineering B, 2009, 159-160, 338-41