It was noted that co-implantation of heterogeneous dopants in materials could be used to control the principal dopant distribution. Atom probe tomography and secondary ion mass spectrometry were used to investigate the impact of co-implanted carbon on boron diffusion in silicon. After annealing, three-dimensional atom probe tomography analysis of dopant distributions revealed the presence of carbon-boron co-clusters around the projection range of boron. In addition, secondary ion mass spectrometric depth profiles revealed enhanced boron concentration around the projection range of carbon. These results suggested that the carbon-boron interaction suppresses boron diffusion in silicon.

Impact of Carbon Coimplantation on Boron Behavior in Silicon: Carbon-Boron Coclustering and Suppression of Boron Diffusion. Y.Shimizu, H.Takamizawa, K.Inoue, T.Toyama, Y.Nagai, N.Okada, M.Kato, H.Uchida, F.Yano, T.Tsunomura, A.Nishida, T.Mogami: Applied Physics Letters, 2011, 98[23], 232101