The transient enhanced diffusion of B on 2 different locally oxidized structures was evaluated. The B profiles were measured by means of secondary ion mass spectroscopy sputtering, from the back of the wafers, in order to eliminate any effects which were caused by the uneven surfaces of the structures. The transient enhanced diffusion of B was suppressed in structures with a high mechanical stress.

Suppression of Transient Enhanced Diffusion by Local Oxidation Silicon Induced Stress M.Okuno, T.Aoyama, S.Nakamura, H.Arimoto, K.Horiuchi: Japanese Journal of Applied Physics - 1, 1999, 38[4B], 2411-4

 

Table 21

Effect of CoSi2 Coating on B Diffusion in Si

CoSi2 Layer

Pre-Treatment

Diffusion Treatment

Enhancement

yes

1050C, 20s, N2+O2

900C, 840s, O2

0.21

yes

1050C, 20s, N2+O2

950C, 360s, O2

0.28

yes

1050C, 20s, N2+O2

1000C, 60s, O2

0.53

yes

1050C, 20s, N2+O2

1050C, 20s, O2

0.56

yes

-

1050C, 20s, N2+O2

0.75

yes

-

1050C, 40s, N2+O2

0.52

yes

-

1100C, 20s, N2+O2

0.80

no

-

800C, 900s, O2

1.43

no

-

850C, 600s, O2

7.63

no

-

900C, 300s, O2

1.60

no

-

950C, 30s, O2

3.12

no

-

950C, 90s, O2

4.24

no

-

1000C, 40s, O2

4.20

no

-

1050C, 10s, O2

1.38

no

-

1050C, 20s, O2

4.65