A study was made of interactions, between point defects and pre-existing extended defects, via associated changes in the transient enhanced diffusion of B. The extended defects were produced by 40 to 300keV Si implantation to a dose of 2 x 1015/cm2, followed by rapid thermal annealing (1000C, 40s, N ambient). Ions of B were then implanted, using an energy of 40keV and a dose of 4 x 1014/cm2. The samples were again annealed by means of rapid thermal annealing (800 to 1100C). Transmission electron microscopy and secondary ion mass spectrometry were used to monitor changes in dislocation loops and B profiles. These loops lay close to the B distribution, and it was noted that the transient enhanced diffusion of B during post-implantation annealing was strongly suppressed. This was attributed to the trapping, by loops, of interstitials which were associated with the implanted B.Effect of Interaction between Point Defects and Pre-Existing Dislocation Loops on Anomalous B Diffusion in Silicon. S.Pan, I.V.Mitchell: Materials Chemistry and Physics, 1996, 46[2-3], 252-8