Low-energy and low-dose B+-implanted material was studied by using transmission electron microscopy and secondary ion mass spectrometry. Czochralski-type (100) wafers were implanted with 4keV B+ to a dose of 1014/cm2. Annealing was carried out at temperatures of between 700 and 800C, for times of between 15s and 8h, in a N atmosphere. The secondary ion mass spectrometry results revealed a transient enhanced B diffusion which saturated in less than 0.25h at all of the annealing temperatures that were used. Transient enhanced diffusion resulted in an increase, in the junction depth, by at least 60nm at a concentration of 1016/cm3. Transmission electron microscopic studies showed that, even for the shortest times before transient enhanced diffusion was observed, {311} defects were not detected. It was concluded that there might be more than one source of interstitials for transient enhanced diffusion. Transient Enhanced Diffusion without {311} Defects in Low Energy B+-Implanted Silicon. L.H.Zhang, K.S.Jones, P.H.Chi, D.S.Simons: Applied Physics Letters, 1995, 67[14], 2025-7