The effect of  in situ  photo-excitation, during B ion implantation, upon subsequent transient enhanced B diffusion was investigated. Photo-excitation, using a Hg arc-lamp, was performed during 35keV B+ implantation to a dose of 5 x 1014/cm2 at 177K. A reverse annealing effect was observed at temperatures ranging from 550 to 700C. Also, the transient enhanced diffusion of B, as measured using secondary ion mass spectrometry following annealing (800C, 0.5h), was suppressed. Both effects demonstrated that the creation of self-interstitials during implantation was significantly reduced.

Suppression of Transient Enhanced Diffusion Following in situ Photoexcitation During Boron Ion Implantation. J.Ravi, J.Erokhin, G.A.Rozgonyi, C.W.White: Applied Physics Letters, 1995, 67[15], 2158-60