The interaction of implantation-induced dislocation loops and interstitials was studied. Experiments which were carried under dry oxidation conditions consistently revealed a significant reduction in oxidation-enhanced B diffusion in a buried layer, due to the very efficient interstitial capture effect of dislocation loops; thus suggesting the occurrence of diffusion-limited dislocation loop growth. A simple analytical solution for interstitial supersaturation, and an analysis of the data in terms of a time dependence of the oxidation-enhanced diffusion suppression, demonstrated that the interaction of dislocation loops and interstitials was not a reaction-limited, but a diffusion-limited, process. Simulations which incorporated a model for the interaction mechanism agreed with secondary ion mass spectroscopic and with transmission electron spectroscopic data.

Diffusion-Limited Interaction of Dislocation Loops and Interstitials during Dry Oxidation in Silicon. H.Park, H.Robinson, K.S.Jones, M.E.Law: Applied Physics Letters, 1994, 65[4], 436-8