A systematic investigation of the diffusion of Be, B, Na, Mg, Cl, K, Ca, Ti, V, Cr, Mn, Fe, Ni, Zn, Ge, Rb, and Mo in Si was carried out. The elements were implanted into Si wafers as low dose impurities, and then post heat-treatments of the ion-implanted samples were conducted at different temperatures for a specific time. Following the anneals, the depth profiles were obtained by secondary ion mass spectrometry analyses. A wide range of diffusion behavior was observed for these elements. Based on differences in the depth profiles the diffusion mechanism was identified where possible.Secondary Ion Mass Spectrometry Characterization of the Diffusion Properties of 17 Elements Implanted into Silicon. H.Francois-Saint-Cyr, E.Anoshkina, F.Stevie, L.Chow, K.Richardson, D.Zhou: Journal of Vacuum Science and Technology B, 2001, 19[5], 1769-74

Figure 14

Diffusivity of B in Si as a Function of P Content

(a: 950C, 0.25h; b: 800C, 0.75h; c: 750C, 1h; d: 700h, 2.75h)