Nanoscale organic-inorganic films were grown using sol-gel and used as sources of boron and gadolinium diffusion into silicon. Features of the boron depth profiles were studied for the case of separate B diffusion and for simultaneous diffusion with gadolinium from grown films, using secondary ion mass spectrometry. Numerical simulation provided an adequate description of complex portions of experimentally measured boron diffusion profiles. A model was proposed which considered the boron redistribution between the glassy film and the oxide layer. This model permitted the determination of the optimum boron diffusivities and provided the best agreement between experimental and calculated results.

Features of Simultaneous Diffusion of Boron and Gadolinium in Silicon from Nanoscale Hybrid Organic-Inorganic Films. I.V.Smirnova, O.A.Shilova, V.A.Moshnikov, A.E.Gamarts: Semiconductors, 2009, 43[10], 1394-9