The depth profiles of high dosage 52Cr+ ions implanted into (100) crystalline samples after annealing at between 300 and 1000C were studied by secondary ion mass spectrometry and cross-sectional transmission electron microscopy. At dosages of 1015/cm2 and above, the surface layer of the substrate was amorphized. During subsequent thermal annealing, the depth profiles of the implanted ions were strongly coupled to the solid phase epitaxial growth of amorphous Si. After annealing of 1015/cm2 implanted samples at 900C and 1000C, most of the Cr had left. The 1014/cm2 Cr-implanted sample showed that Cr ions existed only near to the surface after 1000C annealing.

Diffusion Profiles of High Dosage Cr and V Ions Implanted into Silicon. P.Zhang, F.Stevie, R.Vanfleet, R.Neelakantan, M.Klimov, D.Zhou, L.Chow: Journal of Applied Physics, 2004, 96[2], 1053-8