Chromium ions with low dosages (1012 or 1013/cm2) were implanted into Si (100) crystalline substrates. Thermal anneals were carried out at between 300 and 1000C in order to study the effects of ion implantation dose on the Cr diffusion profiles. Secondary ion mass spectroscopy was used to characterize the profiles of the Cr impurities. At a 1012/cm2 dosage and for 500C annealing, the diffusivity of Cr in Si was determined to be 1.0 x 10−14cm2/s.

Diffusion Profiles of Low Dosage Chromium Ions Implanted into (100) Crystalline Silicon. F.Salman, P.Zhang, L.Chow, F.A.Stevie: Materials Science in Semiconductor Processing, 2006, 9[1-3], 62-5