The depth profiles of high dosage 52Cr+ and 51V+ ions implanted into (100) crystalline samples after annealing at between 300 and 1000C were studied by secondary ion mass spectrometry and cross-sectional transmission electron microscopy. At dosages of 1015/cm2 and above, the surface layer of the Si substrate was amorphized. During subsequent thermal annealing, the depth profiles of the implanted ions were strongly coupled with the solid phase epitaxial growth of amorphous Si. Silicide precipitate formation was important in understanding the differences between Cr and V diffusion. After annealing of the 1015/cm2 implanted samples at 900C and 1000C, most of the Cr had left the Si, but only 10% of the V had escaped. The 1014/cm2 Cr-implanted sampleThe depth profiles of high dosage 52Cr+ and 51V+ ions implanted into (100) crystalline samples after annealing at between 300 and 1000C were studied by secondary ion mass spectrometry and cross-sectional transmission electron microscopy. At dosages of 1015/cm2 and above, the surface layer of the Si substrate was amorphized. During subsequent thermal annealing, the depth profiles of the implanted ions were strongly coupled with the solid phase epitaxial growth of amorphous Si. Silicide precipitate formation was important in understanding the differences between Cr and V diffusion. After annealing of the 1015/cm2 implanted samples at 900C and 1000C, most of the Cr had left the Si, but only 10% of the V had escaped. The 1014/cm2 Cr-implanted sample