The migration of radioactive P in polycrystalline material was studied at 566 to 980C. Diffusion profiles were determined by using anodic oxidation sectioning and radiotracer detection. Grain boundary diffusivities were obtained by using the LeClaire method. It was found that the results, assuming a boundary width of 5nm, were described by:

D (cm2/s) = 4.8 x 10-3 exp[-2.65(eV)/kT]

M.R.Murti, K.V.Reddy: Semiconductor Science and Technology, 1989, 4[8], 622-5