Secondary ion mass spectrometry was used to characterize the H/D distribution and concentration on test device structures which were subjected to D annealing. The temperature dependence, and the effect of doping upon the transport of D to the gate oxide interface (resulting in interface passivation), were examined. It was found that undoped polycrystalline material appeared to be an efficient barrier to D transport at typical sintering temperatures.

Examination of Deuterium Transport through Device Structures P.J.Chen, R.M.Wallace: Applied Physics Letters, 1998, 73[23], 3441-3