Secondary ion mass spectrometry was used to characterize the H/D distributions and concentrations in CMOS test structures during D2 annealing. The temperature dependence of, and doping effect upon, D transport were determined. It was found that undoped polycrystalline Si appeared to be an efficient barrier to D transport at typical post-metallization sintering temperatures.

Deuterium Transport through Device Structures P.J.Chen, R.M.Wallace: Journal of Applied Physics, 1999, 86[4], 2237-44