The effect of annealing at up to 1550K under Ar pressure up to 1.5GPa high-temperature high pressure treatment on Si implanted with He, H or O (Si:He, Si:H or Si:O) was investigated by X-ray, secondary ions mass spectrometry, transmission electron microscopy, photoluminescence and electrical methods. The high-temperature high-pressure treatment of Si:He results in decrease of defect concentration. The treatment at 720K, 1.1GPa for 10h resulted in unchanged strain (while annealing at 720K, 105Pa ¯ in its marked decrease) and in enhancement of thermal donor (TD) concentration. A similar treatment of Si:H resulted in suppression of H out-diffusion with its pronounced diffusion into sample depth and stress-stimulated creation of small defects/TD. Generation of dislocations was strongly suppressed in the high-temperature high-pressure treated Si:O samples. The observed effects were explained accounting for HP-induced suppression of He and H out-diffusion from Si:He and Si:H, and for a decrease of misfit at the O-precipitate/Si boundary in Si:O.

Effect of Uniform Stress on Silicon Implanted with Helium, Hydrogen and Oxygen. A.Misiuk, J.Bak-Misiuk, I.V.Antonova, V.Raineri, A.Romano-Rodriguez, A.Bachrouri, H.B.Surma, J.Ratajczak, J.Katcki, J.Adamczewska, E.P.Neustroev: Computational Materials Science, 2001, 21[4], 515-25