A great deal of the H that was introduced into n-type material at about 150C formed complexes which were termed, H2*, in order to distinguish them from the stable and almost immobile complex, H2, which formed in p-type material. Secondary ion mass spectrometric measurements were made of the thermally-induced depth distribution of D which was present mainly as 2H2*. The activation energy for migration (table 28) was 0.81eV, but the data did not reveal whether the migration involved dissociation. Other work indicated that, for annealing times of up to 25h at 60C, there was no detectable redistribution or dissociation of 2H2*. The effect of the presence of H2* upon the evolution of neutralized donor profiles at these temperatures was negligible.

Migration of the H2* Complex and its Relation to H- in n-Type Silicon. N.M.Johnson, C.Herring: Physical Review B, 1991, 43[17], 14297-300

Table 27

Diffusivity of H in Doped Amorphous Si