The interdiffusion of Hf and Si from (HfO2)1–x(SiO2)x thin films, deposited onto Si (100), was studied using X-ray photo-electron spectroscopy, time-of-flight secondary ion mass spectrometry, high-resolution transmission electron microscopy, and Rutherford back-scattering spectrometry in combination with chemical etching. After extreme rapid and conventional furnace thermal annealing treatments, Hf incorporation into Si was limited to less than 0.5 to 1nm from the interface.

Hafnium Interdiffusion Studies from Hafnium Silicate into Silicon. M.Quevedo-Lopez, M.El-Bouanani, S.Addepalli, J.L.Duggan, B.E.Gnade, R.M.Wallace, M.R.Visokay, M.Douglas, L.Colombo: Applied Physics Letters, 2001, 79[25], 4192-4