The correlation of the evolution of end-of-range damage with transient enhanced In diffusion was studied by means of secondary ion mass spectrometry and transmission electron microscopy. A physically based model for diffusion and defect growth was applied to the In diffusion system. Implantation with 200keV In to 1014/cm2 through a 10nm screen oxide into <100> p-type Czochralski wafers was performed. During post-implantation annealing (750C, 120s to 2h), the formation of dislocation loops and In segregation into loops were observed. Simulation of the evolution of end-of-range defects showed that there was a period during which {311} defects dissolved and released free interstitials before the Ostwald ripening step of end-of-range dislocation loops. A diffusion model that accounted for the interaction between In and loops indicated In pile-up to the loops. Segregation of In to loops occurred at a pure growth step of loops and continued during the Ostwald ripening step. Although dislocation loops and In segregation in the near-surface region were easily dissolved by high-temperature annealing, end-of-range dislocation loops in the bulk region were rigid and well developed. It was concluded that the In trapped by loops having a large radius was energetically stable. It was shown that modelling of the evolution of end-of-range defects was important for the understanding of In transient enhanced diffusion.

Evolution of End-of-Range Damage and Transient Enhanced Diffusion of Indium in Silicon. T.Noda: Journal of Applied Physics, 2002, 91[2], 639-45