Systematic diffusion experiments were performed in dry oxidizing ambients, at temperatures ranging from 800 to 1050C, by using wafers which were implanted with In. Secondary-ion mass spectrometry was used to analyze the dopant distributions before and after heat treatment. The oxidation-enhanced diffusion parameter and the segregation coefficient at the Si/SiO2 interface (ratio of the In concentration in the Si to that in the oxide) were estimated as a function of temperature by using secondary ion mass spectrometry depth profiles. It was observed that the segregation coefficient of In at the Si/SiO2 interface was much less than unity (as in the case of B). However, unlike the case of B, the segregation coefficient of In at the Si/SiO2 interface decreased with increasing temperature. The validity of the deduced parameters was verified by comparing simulated and measured secondary ion mass spectrometry profiles for an In-implanted metal-oxide semiconductor field-effect-transistor.Diffusion Parameters of Indium for Silicon Process Modeling. I.C.Kizilyalli, T.L.Rich, F.A.Stevie, C.S.Rafferty: Journal of Applied Physics, 1996, 80[9], 4944-7