The first investigation of the diffusion of Pm in Si was reported. It was found that, at 1100 to 1250C, the temperature dependence of the diffusion coefficient could be described by:

D (cm2/s) = 5.0 x 10-3 exp[-3.3(eV)/kT]

D.E.Nazyrov, G.S.Kulikov, R.S.Malkovich: Technical Physics Letters, 1997, 23[1], 68-9