The effect of doping-type, Sb, As and B upon O out-diffusion from heavily-doped Czochralski-type wafers was investigated by using secondary ion mass spectroscopy (table 31). The results indicated that, although O diffusion was retarded in heavily B- and As-doped wafers during 800C annealing, it was not affected by heavy Sb-doping. This indicated that charge effects and atomic size effects had a negligible effect upon O diffusion. The B and As diffusion retardation effects were attributed to the existence of dopant-O complexes. The O solubility was highest in the most heavily B-doped samples when annealed at low temperatures.

Oxygen Diffusion in Heavily Antimony-, Arsenic-, and Boron-Doped Czochralski Silicon Wafers. T.Ono, G.A.Rozgonyi, E.Asayama, H.Horie, H.Tsuya, K.Sueoka: Applied Physics Letters, 1999, 74[24], 3648-50

Table 32

Diffusivity of O in Doped Si