Secondary ion mass spectrometry was used to determine out-diffusion profiles from Sb-doped (6 x 1015 to 3 x 1018/cm3) Czochralski material. These profiles were then used to estimate the diffusivity of 16O. Its value at 1100C was 1.1 x 10-10cm2/s. It was found that the out-diffusion behavior was not affected by the Sb content.

Chemical Vapor Deposition of a Silicon Nitride Layer with an Excellent Interface by NH3 Plasma Treatment. W.Wijaranakula, J.H.Matlock, H.Mollenkopf: Applied Physics Letters, 1988, 53[12], 1068-70