Out-diffusion of O during high-temperature annealing was investigated in Czochralski Si doped with Ge, using spreading resistance profile and secondary ion mass spectrometry techniques. It was suggested that O out-diffusion in Si could be enhanced by Ge doping when annealed at 1050 to 1200C. Such enhancement increased with annealing temperature as well as increasing with the Ge concentration introduced into the Si. It was proposed that the enhanced O out-diffusion could be due to a fast diffusion channel, for interstitial O atoms, which was introduced by the substituted Ge atoms.

Enhanced Oxygen Out-Diffusion in Silicon Crystal Doped with Germanium. J.Chen, D.Yang, X.Ma, R.Fan, D.Que: Journal of Applied Physics, 2007, 102[6], 066102