Out-diffusion profiles of oxygen in Czochralski Si(111) at 700 to 1160C, and for three processing conditions (nitrogen atmosphere, steam oxidation, phosphorus in-diffusion) were measured using secondary ion mass spectrometry. The diffusivity and solubility of oxygen in Si were determined by fitting these profiles to a simple diffusion model. The O diffusivity exhibited little or no dependence upon the processing conditions and could be described by:

D(cm2/s) = 1.4 x 10-1exp[-2.53(eV)/kT]

The observations showed that point defects had little effect upon oxygen diffusion, and demonstrated that oxygen diffused mainly via an interstitial mechanism. The oxygen solubility was greatest during steam oxidation.

Outdiffusion and Diffusion Mechanism of Oxygen in Silicon. S.T.Lee, D.Nichols: Applied Physics Letters, 1985, 47, 1001