The diffusion of 35S into Si was investigated by using the closed-ampoule technique. Penetration profiles of erfc-type were determined by means of mechanical sectioning. It was found that the diffusion coefficients at 1328 to 1671K obeyed:

D(cm2/s) = 4.7 x 10-2exp[-1.80(eV)/kT]

The long-range transport appeared to be controlled by a minority of interstitial S atoms.

F.Rollert, N.A.Stolwijk, H.Mehrer: Applied Physics Letters, 1993, 63[4], 506-8