Secondary ion mass spectrometry and numerical simulation were used to investigate P diffusion and segregation in the SiO2-Si(111) system during thermal oxidation of P ion-implanted Si layers in dry or  humid O between 950 and 1150C. The results demonstrated that the segregation coefficient of P in SiO2 and Si depended not only upon the oxidation temperature and environment but also upon the oxidation time, which was interpreted in terms of the variation in the interfacial density of intrinsic point defects as a result of implantation-damage annealing. A model for the reaction segregation of impurities was used to evaluate the equilibrium segregation coefficient of P as a function of temperature.

Effect of Thermal Oxidation on the Segregation of Phosphorus Implanted into Silicon. O.V.Aleksandrov, N.N.Afonin: Inorganic Materials, 2005, 41[9], 972-80