Proximity rapid thermal diffusion was investigated, using P spun-on dopant sources, with regard to the effect of the spun-on thickness, the diffusion temperature, the separation between wafers, and the nature of the ambient. Sheet resistance measurements, dopant distributions (obtained by secondary ion mass spectroscopy), and electron microprobe analyses revealed fast P out-diffusion from the dopant source. A simplified model for P diffusion within the spun-on source, and for evaporation, confirmed the occurrence of fast transport and limited evaporation. An analysis of the process kinetics suggested that, at high rapid thermal diffusion temperatures, doping of the processed wafer was controlled by gas-phase transport. Surface reactions controlled the process at low diffusion temperatures. Kinetics of Phosphorus Proximity Rapid Thermal Diffusion using Spin-On Dopant Source for Shallow Junctions Fabrication. P.B.Grabiec, W.Zagozdzon-Wosik, G.Lux: Journal of Applied Physics, 1995, 78[1], 204-11