A model was presented for the diffusion of dopant atoms implanted into silicon. The model was based upon the creation and migration of dopant+vacancy and dopant+self-interstitial complexes. It accounted for process non-linearity and the influence of non-uniform defect distributions, as well as the effect of electric fields and elastic stresses upon the migration of atoms. The simulation results were compared with SIMS investigations of the rapid thermal annealing of phosphorus implanted into silicon. The calculated distribution agreed well with the experimental data, and reproduced anomalous diffusion (kink-and-tail) phenomena which were specific to phosphorus.

Modelling of Low-Energy-Implanted Phosphorus Diffusion during Rapid Thermal Processing of the Semiconductor Structures. A.M.Mironov, F.F.Komarov, A.F.Komarov, V.A.Tsurko, G.M.Zayats, O.I.Velichko: Vacuum, 2009, 83[1], S127-30