The out-diffusion of P during the glow discharge deposition of amorphous hydrogenated material was studied. Secondary ion mass spectrometric measurements, of P profiles in n+/i/SiO2 and i/n+/SiO2 double-layer structures, showed that thermally assisted P diffusion was negligibly small at 300C. The P diffusion was significantly enhanced after passivation with H plasma at the same temperature. It was suggested that the release of P by atomic H, to form PHx radicals, was the rate-limiting step for enhanced diffusion.

Enhanced Phosphorus Diffusion during the Glow Discharge Deposition of n-Type Amorphous Silicon Hydrogen Alloy. J.S.Chou, J.H.Wei, S.C.Lee: Applied Physics Letters, 1993, 63[22], 3060-2

Figure 16

Diffusivity of P in Si