The diffusion of phosphorus in crystallized amorphous Si layers was studied using secondary ion mass spectroscopy. A two‐dimensional diffusion model was used to find effective grain (Dg) and grain‐boundary (Dgb) diffusion coefficients. This simplified model led to Dgb ≤ 10Dg; which was significantly lower than the values deduced using conventional larger grained polysilicon. The present result were consistent with specific gravity measurements, which found a significantly lower so-called mass defect for layers deposited in an amorphous state and subsequently crystallized; as compared with initially polycrystalline layers.

Phosphorus Diffusion in Polycrystalline Silicon. D.L.Losee, J.P.Lavine, E.A.Trabka, S.T.Lee, C.M.Jarman: Journal of Applied Physics, 1984, 55, 1218

 

Table 34

Effect of CoSi2 Coating on Sb Diffusion in Si

CoSi2 Layer

Pre-Treatment

Diffusion Treatment

Enhancement

yes

1050C, 30s, N2+O2

1050C, 180s, O2

2.11

yes

1050C, 30s, N2+O2

1050C, 360s, O2

1.87

yes

1050C, 30s, N2+O2

1050C, 540s, O2

2.17

yes

1050C, 30s, N2+O2

1100C, 60s, O2

2.07

yes

1050C, 30s, N2+O2

1100C, 120s, O2

1.49

yes

1050C, 30s, N2+O2

1150C, 20s, O2

1.52

yes

1050C, 30s, N2+O2

1200C, 5s, O2

1.05

yes

1050C, 30s, N2+O2

1200C, 10s, O2

1.53

yes

-

1050C, 30s, N2+O2

3.90

yes

-

1150C, 20s, N2+O2

1.83

no

-

1050C, 960s, O2

0.33

no

-

1100C, 240s, O2

0.26

no

-

1100C, 540s, O2

0.24

no

-

1150C, 180s, O2

0.13

no

-

1200C, 20s, O2

0.42