The redistribution of atomic-layer doped Sb was investigated during post-growth annealing by using secondary ion mass spectrometry depth profiling. Kink development and SiO2/Si interface segregation were observed. The diffusivity was concentration-dependent over Sb contents of about 5 x 1017/cm3. Two types of Sb diffusion appeared to involve activated processes at temperatures of between 710 and 850C. The associated activation energies ranged from 0.4 to 0.6eV. These values were much lower than that (4eV) for bulk diffusion; which included the enthalpies of vacancy formation and migration.

Redistribution of Sb in an Atomic Layer Doped Si. S.Fukatsu, S.Kubo, Y.Shiraki, R.Ito: Applied Physics Letters, 1991, 58[11], 1152-4