An investigation was made of the diffusion of Sb in the presence of defects injected by the high-energy implantation of Si ions at room temperature. Here, MeV ion implantation increased the concentrations of vacancies, which induced transient-enhanced diffusion of Sb deposited in Si. A significant enhancement of Sb diffusion was observed. Secondary ions mass spectroscopy was performed on the implanted samples before and after annealing. Rutherford back-scattering spectrometry was used to characterize the high-energy implantation damage. By fitting diffusion profiles to a linear diffusive model, information on atomic-scale Sb diffusion, such as the generation rate of mobile state Sb and its mean migration length, were extracted.

Diffusion of Antimony in Silicon in the Presence of Point Defects. X.Yu, K.B.Ma, Q.Y.Chen, X.Wang, J.Liu, W.K.Chu, L.Shao, P.E.Thompson: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2007, 261[1-2], 1146-9