Self-diffusion coefficients were measured in intrinsic and extrinsic samples at 900C by using an isotopically enriched 30Si layer and determining the profiles by secondary ion mass spectrometry. It was found that Si self-diffusion was enhanced in a heavily B-doped sample but differed little, from that for intrinsic Si, in heavily As- or Sb-doped samples (table 35).

Self-Diffusion in Extrinsic Silicon Using Isotopically Enriched 30Si Layer. Y.Nakabayashi, H.I.Osman, T.Segawa, K.Saito, S.Matsumoto, J.Murota, K.Wada, T.Abe: Japanese Journal of Applied Physics - 2, 2001, 40[3A], L181-2

Table 35

Diffusivity of 30Si in Doped Si

* intrinsic