The Si self-diffusion coefficients were measured in intrinsic and extrinsic Si from 870 to 1070C using isotopically pure 30Si/natural Si heterostructures. The 30Si diffusion profiles were determined by secondary ion mass spectrometry. The temperature dependence of the intrinsic diffusion coefficient in bulk Si was obtained. Upon comparing it for heavily As- or B-doped Si, it was found that the fractional contribution of Si self-diffusion varied with the diffusion temperature, and that different types of point defect (self-interstitial, vacancy) were supersaturated by the Fermi level effect in As- and B-doped Si.

Self-Diffusion in Intrinsic and Extrinsic Silicon Using Isotopically Pure 30Silicon/Natural Silicon Heterostructures. Y.Nakabayashi, H.I.Osman, K.Toyonaga, K.Yokota, S.Matsumoto, J.Murota, K.Wada, T.Abe: Japanese Journal of Applied Physics - 1, 2003, 42[6A], 3304-10